OptiMOS™2 Power-Transistor Features • For fast switching converters and sync. rectification • Qualified according to JEDEC1) for target applications • Super Logic level 2.5V rated; N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Ha.
• For fast switching converters and sync. rectification
• Qualified according to JEDEC1) for target applications
• Super Logic level 2.5V rated; N-channel
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC026N02KS G
Product Summary V DS R DS(on),max ID
20 V 2.6 mΩ 100 A
PG-TDSON-8
Type BSC026N02KS G
Package PG-TDSON-8
Marking 026N02KS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Contin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC026N04LS |
Infineon |
MOSFET | |
2 | BSC026N08NS5 |
Infineon |
MOSFET | |
3 | BSC026NE2LS5 |
Infineon |
MOSFET | |
4 | BSC020N03LS |
Infineon |
MOSFET | |
5 | BSC020N03LSG |
Infineon Technologies |
MOSFET | |
6 | BSC020N03MSG |
Infineon |
Power MOSFET | |
7 | BSC022N03 |
Infineon Technologies AG |
OptiMOS2 Power-Transistor | |
8 | BSC022N03S |
Infineon Technologies AG |
OptiMOS2 Power-Transistor | |
9 | BSC022N03SG |
Infineon |
Power MOSFET | |
10 | BSC022N04LS |
Infineon |
MOSFET | |
11 | BSC024N025SG |
Infineon |
Power MOSFET | |
12 | BSC024NE2LS |
Infineon |
n-Channel Power MOSFET |