BSC020N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested Product Summary V DS R DS(on),max ID V GS=10 V V GS=4.5 V 30 V 2 mΩ 2.5 100 A • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product .
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% Avalanche tested
Product Summary
V DS R DS(on),max
ID
V GS=10 V V GS=4.5 V
30 V 2 mΩ 2.5 100 A
• N-channel
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
PG-TDSON-8
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC020N03MS G
PG-TDSON-8 020N03MS
Maximum ratings, at T j=25 °C, unless otherwise spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC020N03LS |
Infineon |
MOSFET | |
2 | BSC020N03LSG |
Infineon Technologies |
MOSFET | |
3 | BSC022N03 |
Infineon Technologies AG |
OptiMOS2 Power-Transistor | |
4 | BSC022N03S |
Infineon Technologies AG |
OptiMOS2 Power-Transistor | |
5 | BSC022N03SG |
Infineon |
Power MOSFET | |
6 | BSC022N04LS |
Infineon |
MOSFET | |
7 | BSC024N025SG |
Infineon |
Power MOSFET | |
8 | BSC024NE2LS |
Infineon |
n-Channel Power MOSFET | |
9 | BSC025N03LS |
Infineon |
Power MOSFET | |
10 | BSC025N03LSG |
Infineon |
Power MOSFET | |
11 | BSC025N03MS |
Infineon |
Power MOSFET | |
12 | BSC025N03MSG |
Infineon |
Power MOSFET |