BP104 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO–5 devices in many applications. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (lp=950nm). The large active area combined with a flat case giv.
D D D D D D
Large radiant sensitive area (A=7.5 mm2) Wide angle of half sensitivity ϕ = ± 65° High photo sensitivity Fast response times Small junction capacitance Plastic case with IR filter (l=950 nm)
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100
–55...+100 260 350 Unit V mW °C °C °C K/W
x 25 °C
t
x3s
Document Number 81500 Rev. 2, 20-May-99
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BP1001-7R |
Power-One |
120...195 Watt DC-DC Converters | |
2 | BP101WX1-200 |
BOE |
TFT LCD | |
3 | BP101WX1-206 |
BOE |
TFT LCD | |
4 | BP101WX7-100-3940 |
BOE |
TFT LCD | |
5 | BP103 |
Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor | |
6 | BP103 |
OSRAM |
Silicon NPN Phototransistor | |
7 | BP103B |
Siemens Semiconductor Group |
Silicon NPN Phototransistor | |
8 | BP103BF |
Siemens Semiconductor Group |
Silicon NPN Phototransistor | |
9 | BP1042 |
RF Monolithics |
70 Mhz SAW Filter | |
10 | BP104F |
Siemens Semiconductor Group |
Silicon Phototransistor | |
11 | BP104F |
OSRAM |
Silicon PIN Photodiode | |
12 | BP104FAS |
OSRAM |
Silicon PIN Photodiode |