BP103B - Siemens Semiconductor Group

BP103B Silicon NPN Phototransistor

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3s Iron soldering temperature ≥ 2 mm distance from case bott.

Features

q Especially suitable for applications from 420 nm to 1130 nm (BP 103 B) and of 880 nm (BP 103 BF) q High linearity q 5 mm LED plastic package q Available in groups Applications q Computer-controlled flashes q Light-reflecting switches for steady and varying intensity q Industrial electronics q For control and drive circuits Semiconductor Group 204 BP 103 B BP 103 BF Typ (
*ab 4/95) Bestellnummer Type (
*as of 4/95) Ordering Code BP 103 B-2 (
*SFH 300-2) BP 103 B-3 (
*SFH 300-3) BP 103 B-41) (
*SFH 300-4) BP 103 BF-2 (
*SFH 300 FA-2) BP 103 BF-3 (
*SFH 300 FA-3) BP 103 BF-4 (
*SFH 300 FA-4) 1) Ge.