BM2341 - Bookly

BM2341 P-Channel Enhancement Mode MOSFET

BM2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, othe.

Features

NFORMATION Part Number Package Part Marking ST2341S23RG SOT-23-3L 41YA ※ Process Code : A ~ Z ; a ~ z ※ ST2341S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb
  – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.bookly.com ST2341 2006. Rev.1 BM2341 P Channel Enhancement Mode MOSFET -3.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM -20 ±12 -3.5 -2.8 -12 Continuous Source Current (Diode C.