BM2300 - Bookly

BM2300 N-Channel Enhancement Mode MOSFET

The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and othe.

Features

FORMATION Part Number Package BM2300 SOT-23-3L ※ Process Code : A ~ Z ; a ~ z ※ BM2300 : SOT23-3L R : Tape Reel ; G : Pb
  – Free 1 120 Bentley Square, Mountain View, Ca 94040 USA www.bookly.com Part Marking 42YA ST2300 2005. V1 BM2300 N Channel Enhancement Mode MOSFET 4A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Rang.