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A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 47.
High efficiency
High power gain
Excellent ruggedness (VSWR 40 : 1 through all phases)
Excellent thermal stability
Integrated ESD protection
One Doherty design covers the.
BLF888D - NXP
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this devic.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF888 |
NXP |
UHF Power LDMOS Transistor |
|
| 2 | BLF888A |
Ampleon |
Power LDMOS transistor |
|
| 3 | BLF888A |
NXP |
UHF Power LDMOS Transistor |
|
| 4 | BLF888AS |
Ampleon |
Power LDMOS transistor |
|
| 5 | BLF888AS |
NXP |
UHF Power LDMOS Transistor |
|
| 6 | BLF888B |
Ampleon |
Power LDMOS transistor |
|
| 7 | BLF888B |
NXP Semiconductors |
UHF power LDMOS transistor |
|
| 8 | BLF888BS |
Ampleon |
Power LDMOS transistor |
|
| 9 | BLF888BS |
NXP Semiconductors |
UHF power LDMOS transistor |
|
| 10 | BLF888DS |
Ampleon |
Power LDMOS transistor |
|
| 11 | BLF888DS |
NXP |
UHF power LDMOS transistor |
|
| 12 | BLF888E |
Ampleon |
Power LDMOS transistor |
|