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A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f PL(AV) (MHz) (W) PL(M) (W) Gp (dB) .
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BLF888AS - NXP
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent rugg.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF888A |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF888A |
NXP |
UHF Power LDMOS Transistor |
|
| 3 | BLF888 |
NXP |
UHF Power LDMOS Transistor |
|
| 4 | BLF888B |
Ampleon |
Power LDMOS transistor |
|
| 5 | BLF888B |
NXP Semiconductors |
UHF power LDMOS transistor |
|
| 6 | BLF888BS |
Ampleon |
Power LDMOS transistor |
|
| 7 | BLF888BS |
NXP Semiconductors |
UHF power LDMOS transistor |
|
| 8 | BLF888D |
Ampleon |
Power LDMOS transistor |
|
| 9 | BLF888D |
NXP |
UHF power LDMOS transistor |
|
| 10 | BLF888DS |
Ampleon |
Power LDMOS transistor |
|
| 11 | BLF888DS |
NXP |
UHF power LDMOS transistor |
|
| 12 | BLF888E |
Ampleon |
Power LDMOS transistor |
|