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A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at VDS = 50 V; IDq = 1.3 A. Mod.
Easy power control
Integrated ESD protection
Excellent ruggedness
H.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BLF6G15LS-250PBRN |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF6G15L-500H |
Ampleon |
Power LDMOS transistor |
|
| 3 | BLF6G10-200RN |
Ampleon |
Power LDMOS transistor |
|
| 4 | BLF6G10-45 |
NXP |
Power LDMOS Transistor |
|
| 5 | BLF6G10L-40BRN |
NXP Semiconductors |
Power LDMOS transistor |
|
| 6 | BLF6G10LS-135R |
NXP Semiconductors |
Power LDMOS transistor |
|
| 7 | BLF6G10LS-200 |
NXP Semiconductors |
Power LDMOS transistor |
|
| 8 | BLF6G10LS-200R |
NXP Semiconductors |
Power LDMOS transistor |
|
| 9 | BLF6G10LS-200RN |
Ampleon |
Power LDMOS transistor |
|
| 10 | BLF6G10S-45 |
NXP |
Power LDMOS Transistor |
|
| 11 | BLF6G13L-250P |
Ampleon |
Power LDMOS transistor |
|
| 12 | BLF6G13LS-250P |
Ampleon |
Power LDMOS transistor |
|