A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1200 50 1400 Gp (dB) 23 28 D (%) 80 72 1.2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of .
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1400 W Power gain = 28 dB Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmit.
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. T.
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---|---|---|---|---|
1 | BLF178XRS |
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2 | BLF178XRS |
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Power LDMOS transistor | |
3 | BLF178P |
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4 | BLF178P |
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5 | BLF1721M8LS200 |
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6 | BLF174XR |
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7 | BLF174XR |
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8 | BLF174XRS |
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9 | BLF174XRS |
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11 | BLF177 |
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12 | BLF1043 |
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