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BLF178XR - Ampleon

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BLF178XR Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1200 50 1400 Gp (dB) 23 28 D (%) 80 72 1.2 Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of .

Features


 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1400 W  Power gain = 28 dB  Efficiency = 72 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (HF to 128 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmit.

The same part from a different manufacturer

Datasheet BLF178XR - NXP BLF178XR

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. T.

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