Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. R.
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further infor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF1721M8LS200 |
Ampleon |
Power LDMOS transistor | |
2 | BLF174XR |
Ampleon |
Power LDMOS transistor | |
3 | BLF174XR |
NXP |
Power LDMOS transistor | |
4 | BLF174XRS |
Ampleon |
Power LDMOS transistor | |
5 | BLF174XRS |
NXP |
Power LDMOS transistor | |
6 | BLF177 |
NXP |
HF/VHF power MOS transistor | |
7 | BLF178P |
Ampleon |
Power LDMOS transistor | |
8 | BLF178P |
NXP |
Power LDMOS transistor | |
9 | BLF178XR |
Ampleon |
Power LDMOS transistor | |
10 | BLF178XR |
NXP |
Power LDMOS transistor | |
11 | BLF178XRS |
Ampleon |
Power LDMOS transistor | |
12 | BLF178XRS |
NXP |
Power LDMOS transistor |