Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION CONDITIONS 3 14.6 20.1 4.8.
• Internally matched to 50 Ω
• Very wide frequency range (4 Ghz at 3 dB bandwidth)
• Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)
• 10 dBm saturated output power at 1 GHz
• High linearity (18 dBm IP3(out) at 1 GHz)
• Low current (14.6 mA)
• Unconditionally stable. APPLICATIONS
• LNB IF amplifiers
• Cable systems
• ISM
• General purpose. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply curren.
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1 | BGM1011 |
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2 | BGM1013 |
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3 | BGM1013 |
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4 | BGM1014 |
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5 | BGM1032N7 |
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6 | BGM1033N7 |
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7 | BGM1034N7 |
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8 | BGM1043N7 |
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9 | BGM111 |
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10 | BGM113 |
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11 | BGM1143N9 |
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12 | BGM11S |
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