%*% /1$ 6LOLFRQ 'LVFUHWHV %*% DV D *+] /RZ 1RLVH $PSOLILHU 9FF ID IBias 5 0Ω IC 120pF & 10nF & 2.7kΩ 5 / 1.8nH 10Ω 4 3 5 Out In 0Ω 5 18pF 1 2 & BGB540 ,& 2.2pF & 5.6nH / )LJXUH 7DEOH 3DUDPHWHU $SSOLFDWLRQ &LUFXLW 'LDJUDP 0HDVXUHG 3HUIRUPDQFH 'DWD DW 0+] DQG 9&& 6PERO ICC |S21| NF |S11|2 |S22| 2 2 9 .
XQFWLRQ Input matching, DC block RF bypass Output matching, DC block RF bypass Input matching Output matching, RF choke Jumper Supply current adjustment Jumper Stabilization BGB540 SOT343 Infineon Technologies Active biased transistor 0HDVXUHG &LUFXLW 3HUIRUPDQFH All presented measurement values include losses of both PCB and connectors - in other words, the reference planes used for measurements are the PCB’s RF SMA connectors. Noise figure and gain results shown do not have any PCB loss extracted from them. 16 15 d 7 q b à 14 13 12 11 10 1.7 1.75 1.8 1.85 A rrpÃbBCd v h B 1.9 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BGB540 |
Infineon Technologies AG |
Active Biased RF Transistor | |
2 | BGB540 |
Infineon Technologies AG |
A 35 dB Gain-Sloped LNB I.F. Amplifier | |
3 | BGB100 |
NXP |
0 dBm TrueBlue radio module | |
4 | BGB101 |
NXP |
0 dBm Bluetooth radio module | |
5 | BGB110 |
NXP |
Bluetooth radio module | |
6 | BGB203 |
Philips |
Bluetooth System in Package Radio | |
7 | BGB420 |
Infineon Technologies AG |
Active Biased Transistor | |
8 | BGB707L7ESD |
Infineon |
Wideband MMIC LNA | |
9 | BGB717L7ESD |
Infineon |
Low Noise Amplifier MMIC | |
10 | BGB719N7ESD |
Infineon |
Low Noise Amplifier MMIC | |
11 | BGB741L7ESD |
Infineon |
Robust Low Noise Broadband RF Amplifier MMIC | |
12 | BG 3020-7 |
Power-One |
25 Watt DC-DC Converters |