Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements com.
• For high gain low noise amplifiers
• Ideal for wideband applications, cellular telephones, cordless telephones, SAT-TV and high frequency oscillators
• Gma=17.5dB at 1.8GHz
• Small SOT343 package
• Current easy adjustable by an external resistor
• Open collector output
• Typical supply voltage: 1.4-3.3V
• SIEGET®-25 technology
Bias,4 Bias
C,3
Description SIEGET®-25 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10
*IBias .
B,1
E,2
ESD: Electrostatic discharge sensitive device, observe handling precauti.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BGB100 |
NXP |
0 dBm TrueBlue radio module |
|
| 2 | BGB101 |
NXP |
0 dBm Bluetooth radio module |
|
| 3 | BGB110 |
NXP |
Bluetooth radio module |
|
| 4 | BGB203 |
Philips |
Bluetooth System in Package Radio |
|
| 5 | BGB540 |
Infineon Technologies AG |
Active Biased RF Transistor |
|
| 6 | BGB540 |
Infineon Technologies AG |
A 35 dB Gain-Sloped LNB I.F. Amplifier |
|
| 7 | BGB540LNA |
Infineon Technologies AG |
BGB540 as a 1.85 GHz Low Noise Amplifier |
|
| 8 | BGB707L7ESD |
Infineon |
Wideband MMIC LNA |
|
| 9 | BGB717L7ESD |
Infineon |
Low Noise Amplifier MMIC |
|
| 10 | BGB719N7ESD |
Infineon |
Low Noise Amplifier MMIC |
|
| 11 | BGB741L7ESD |
Infineon |
Robust Low Noise Broadband RF Amplifier MMIC |
|
| 12 | BG 3020-7 |
Power-One |
25 Watt DC-DC Converters |
|