BGA8U1BN6 - Infineon

BGA8U1BN6 Low Noise Amplifier

BGA8U1BN6 BGA8U1BN6 Low Noise Amplifier for Ultra High Band 4-6GHz (f.e. LTE - U/ LAA with bypass) Features • Operating frequencies: 4.0 - 6.0 GHz • Insertion power gain: 13.7 dB • Insertion Loss in bypass mode: 7.5 dB • Low noise figure: 1.6 dB • Low current consumption: 4.5 mA • Multi-state control: OFF-, bypass- and high gain-Mode • Ultra small TSNP-6-.

Features

• Operating frequencies: 4.0 - 6.0 GHz
• Insertion power gain: 13.7 dB
• Insertion Loss in bypass mode: 7.5 dB
• Low noise figure: 1.6 dB
• Low current consumption: 4.5 mA
• Multi-state control: OFF-, bypass- and high gain-Mode
• Ultra small TSNP-6-2 leadless package
• RF input and RF output internally matched to 50 Ohm, no external components necessary 0.7 x 1.1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high .