BGA5M1BN6 - Infineon

BGA5M1BN6 18dB High Gain Low Noise Amplifier

BGA5M1BN6 BGA5M1BN6 18dB High Gain Low Noise Amplifier for LTE Midband Features • Operating frequencies: 1805 - 2200 MHz • Insertion power gain: 19.3 dB • Insertion Loss in bypass mode: 4.7 dB • Low noise figure: 0.65 dB • Low current consumption: 9.5 mA • Multi-state control: Bypass- and high gain-Mode • Ultra small TSNP-6-10 leadless package • RF output .

Features

• Operating frequencies: 1805 - 2200 MHz
• Insertion power gain: 19.3 dB
• Insertion Loss in bypass mode: 4.7 dB
• Low noise figure: 0.65 dB
• Low current consumption: 9.5 mA
• Multi-state control: Bypass- and high gain-Mode
• Ultra small TSNP-6-10 leadless package
• RF output internally matched to 50 Ohm
• Low external component count 0.7 x 1.1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA o.