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BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 106 R7s Q62702-F1219 1=B 2=E 3=C 4=E Package SOT-.
. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V µA 100 nA 100 µA 10 40 220 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 106 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 0.95 0.25 4.
BFR106 - NXP
NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF .
BFR106 - Infineon Technologies AG
Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MH.
BFR106 - INCHANGE
·Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFR10 |
SGS-ATES |
NPN Transistor |
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| 2 | BFR11 |
SGS-ATES |
NPN Transistor |
|
| 3 | BFR14B |
Siemens Semiconductor Group |
NPN SILICON MICROWAVE TRANSISTOR |
|
| 4 | BFR14C |
Siemens Semiconductor Group |
NPN SILICON MICROWAVE TRANSISTOR |
|
| 5 | BFR16 |
SGS-ATES |
NPN Transistor |
|
| 6 | BFR17 |
SGS-ATES |
NPN Transistor |
|
| 7 | BFR18 |
SGS-ATES |
NPN Transistor |
|
| 8 | BFR180 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 9 | BFR180 |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 10 | BFR180W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 11 | BFR180W |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 12 | BFR181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
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