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BFR180 NPN Silicon RF Transistor For low-power amplifiers in mobile 3 communication systems (pager) at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR180 Maximum Ratings Parameter Marking RDs 1=B Pin Configuration 2=E Symbol.
= 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFR180 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 3 m.
BFR180 - Siemens Semiconductor Group
BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector curren.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFR18 |
SGS-ATES |
NPN Transistor |
|
| 2 | BFR180W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 3 | BFR180W |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 4 | BFR181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
|
| 5 | BFR181 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 6 | BFR181T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 7 | BFR181T |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 8 | BFR181TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 9 | BFR181W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
|
| 10 | BFR181W |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 11 | BFR182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
|
| 12 | BFR182 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|