BFG520W - NXP

BFG520W NPN 9 GHz wideband transistors

PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. 1 2 MBK523 MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-.

Features

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems. PINNING DESCRIPTION PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter handbook, halfpage 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emit.