BFG520-X - INCHANGE

BFG520-X NPN Transistor

·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

Features

reakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μA hFE DC Current Gain IC=20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1MHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.3 pF Ce Emitter capacitance IC=iC=0,VEB=0.5V,f=1MHz 1.0 pF CC Collector capacitance IE=ie=0,VCB=6V,f=1MHz 0.6 pF ︱S21︱2 Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 17 18 dB NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz IC= 20mA ; VCE= 6V; f= 900MHz 1.1 1.6 1.6 2.1 dB IC= 5mA ; VCE= 8V; f= 2GHz.