BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input c.
D D D D
Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance
D Low input capacitance D High AGC-range D High gain
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
BF998RW Marking: WMO Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85011 Rev. 4, 23-Jun-99
www.vishay.de
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF998R |
Infineon |
Silicon N-Channel MOSFET Tetrode | |
2 | BF998R |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode | |
3 | BF998R |
NXP |
Silicon N-channel dual-gate MOS-FETs | |
4 | BF998R |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode | |
5 | BF998 |
Infineon |
Silicon N-Channel MOSFET Tetrode | |
6 | BF998 |
NXP |
Silicon N-channel dual-gate MOS-FETs | |
7 | BF998 |
Vishay Telefunken |
N-Channel Dual Gate MOS-Fieldeffect Tetrode | |
8 | BF998 |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode | |
9 | BF998W |
Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode | |
10 | BF998W |
Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode | |
11 | BF998WR |
NXP |
N-channel dual-gate MOS-FET | |
12 | BF990A |
NXP |
N-channel dual-gate MOS-FET |