BF998 - NXP

BF998 Silicon N-channel dual-gate MOS-FETs

Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protecte.

Features

 Short channel transistor with high forward transfer admittance to input capacitance ratio
 Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS
 VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistat.