BF909 - NXP

BF909 N-channel dual gate MOS-FET

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 handbook, halfpage d handbook, halfpage d 4 3 3 4 g2 g1 1 2 Top view MAM124 s,b BF909 marking code: %M3. Fig.1 Simplified outline (SOT143) and symbol. g2 .

Features

• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handlin.