BDX24 - INCHANGE

BDX24 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.

Features

otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V ICEO Collector Cutoff Current VCE= 40V; IB= 0 ICBO Collector Cutoff Current VCB=50V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 4V hFE-2 DC Current Gain IC= 3A; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V; f=1.0MHz BDX2.