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·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF large signal power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160.
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB= 0 -140 V VCEX Collector-Emitter Breakdown Voltage IC= -100mA ; VBE= 1.5V -160 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2A -5.0 V VBE(on)-1 Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.7 V VBE(on)-2 Base-Emitter On Voltage ICEX Collector Cutoff Current ICBO Collector Cutoff Current IC= -10A ; VCE= -4V VCE= -140V;VBE= 1.5V VCE= -140V;VBE=1.
BDX20 - Seme LAB
BDX20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.
BDX20 - Comset Semiconductors
PNP BDX20 SILICON TRANSISTORS EPITAXIAL BASE The BDX20 are mounted in TO-3 metal package. LF Large Signal Power Amplific.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDX24 |
INCHANGE |
NPN Transistor |
|
| 2 | BDX25-66-6 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BDX27 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
|
| 4 | BDX28 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
|
| 5 | BDX29 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
|
| 6 | BDX10 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | BDX11 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | BDX11 |
INCHANGE |
NPN Transistor |
|
| 9 | BDX12 |
Seme LAB |
Bipolar NPN Device |
|
| 10 | BDX12 |
INCHANGE |
NPN Transistor |
|
| 11 | BDX13 |
INCHANGE |
NPN Transistor |
|
| 12 | BDX14 |
INCHANGE |
PNP Transistor |
|