BDW23/A/B/C BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications • Power Darlington TR • Complement to BDW24, BDW24A, BDW24B and BDW24C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDW23 : BDW23A : BDW23B : BD.
23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current
* DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC = 2A VCE = 3V, IC = 6A IC = 2A, IB = 8mA IC = 6A, IB = 60mA IC = 2A, IB = 8mA VCE = 3V, IC = 1A VCE = 3V, IC = 6A IF = 2A 1000 750 100 500 500 500 500 2 20000 2 3 2.5 2.5 3 1.8 V V V V V V µA µA µA µA mA VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 200 200 200 200 µA µA µA µA Test Condition IC = 100mA, IB = 0 Min. 45 60 .
·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C ·Minimum Lot-to-L.
BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDW23 |
Power Innovations Limited |
NPN Transistor | |
2 | BDW23 |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers | |
3 | BDW23 |
INCHANGE |
NPN Transistor | |
4 | BDW23A |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers | |
5 | BDW23A |
Power Innovations Limited |
NPN Transistor | |
6 | BDW23A |
INCHANGE |
NPN Transistor | |
7 | BDW23C |
Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers | |
8 | BDW23C |
Power Innovations Limited |
NPN Transistor | |
9 | BDW23C |
INCHANGE |
NPN Transistor | |
10 | BDW21 |
Seme LAB |
Bipolar NPN Device | |
11 | BDW21 |
INCHANGE |
NPN Transistor | |
12 | BDW21C |
Seme LAB |
Bipolar NPN Device |