BDW23A - Power Innovations Limited

BDW23A NPN Transistor

BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDW24, BDW24A, BDW24B and BDW24C 50 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at 3 V, 2 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin .

Features

emperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 6 0.2 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDW23, BDW23A, BDW23B, BDW23C NPN SILICON POWER DARLINGTONS AUGUST 1993 - R.