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·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF ·Complement to Type BDT32F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifie.
ange THERMAL CHARACTERISTICS SYMBOL PARAMETER 1 A 22 W 150 ℃ -65~15 0 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com 55 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT31F 40 BDT31AF 60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT31BF IC= 30mA; IB= 0 80 V BDT31CF 100 VCE(sat) VBE(on) Collector-Emitter Sat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDT31 |
INCHANGE |
NPN Transistor |
|
| 2 | BDT31A |
INCHANGE |
NPN Transistor |
|
| 3 | BDT31AF |
INCHANGE |
Silicon NPN Power Transistors |
|
| 4 | BDT31B |
INCHANGE |
NPN Transistor |
|
| 5 | BDT31BF |
INCHANGE |
Silicon NPN Power Transistors |
|
| 6 | BDT31C |
INCHANGE |
NPN Transistor |
|
| 7 | BDT31CF |
INCHANGE |
Silicon NPN Power Transistors |
|
| 8 | BDT31F |
INCHANGE |
Silicon NPN Power Transistors |
|
| 9 | BDT30 |
INCHANGE |
PNP Transistor |
|
| 10 | BDT30A |
INCHANGE |
PNP Transistor |
|
| 11 | BDT30AF |
INCHANGE |
PNP Transistor |
|
| 12 | BDT30B |
INCHANGE |
PNP Transistor |
|