BD939F - SavantIC

BD939F SILICON POWER TRANSISTOR

·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltag.

Features

off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=120V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 100 7 www.datasheet4u.com BD939F SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V 0.7 1.5 50 50 250 V V µA µA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com BD939F Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 .