BD939 - Inchange Semiconductor

BD939 Silicon NPN Power Transistor

·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934/936/938/940/942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD9.

Features

tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD933 VCEO(SUS) Collector-Emitter Sustaining Voltage BD935 BD937 BD939 IC= 30mA ; IB= 0 BD941 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= 1A; VCE= 2V VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax; .