·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD843 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD844 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 1A; IB= -100mA VBE(on) Base-Emitter On Voltage IC= -1.0A ; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 VCB=-30V; IE= 0; TC= 125℃ IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -5mA ; VCE= -2V hFE-2 DC Current Gain IC= -150mA ; VCE= -2V h.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD840 |
INCHANGE |
PNP Transistor | |
2 | BD840CS |
Pan Jit International |
(BD840CS - BD8200CS) DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
3 | BD840CT |
Pan Jit International |
THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
4 | BD840S |
Pan Jit International |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
5 | BD840T |
Pan Jit International |
THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
6 | BD840YS |
Pan Jit International |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
7 | BD840YT |
Pan Jit International |
THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
8 | BD841 |
INCHANGE |
NPN Transistor | |
9 | BD841 |
NXP |
Silicon Planar Epitaxial Power Transistor | |
10 | BD842 |
INCHANGE |
PNP Transistor | |
11 | BD843 |
NXP |
Silicon Planar Epitaxial Power Transistor | |
12 | BD843 |
INCHANGE |
NPN Transistor |