BD842 - INCHANGE

BD842 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD841 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

Features

isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD842 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 1A; IB= -100mA VBE(on) Base-Emitter On Voltage IC= -1.0A ; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 VCB=-30V; IE= 0; TC= 125℃ IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -5mA ; VCE= -2V hFE-2 DC Current Gain IC= -150mA ; VCE= -2V hF.