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SYMBOL BD675 BD675A 45 45 677 677A 60 60 5 4 0.1 www.DataSheet.net/ 679 681 679A 80 80 100 100 683 UNITS Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation@ Tc=25 oC Derate above 25 C Operating & Storage Junction Temperature Range THERMAL RESISTANCE From Junction to case O VCBO VC.
=5V, IC =0
O
MIN
MAX
UNITS
45 60 80 100 120 500 0.2 2.0 2.0
V
Collector-Cut off Current
ICEO ICBO ICBO
µA mA
Emitter cut off Current
IEBO
mΑ
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN PLASTIC POWER DARLINGTON TRANSISTORS
BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683 TO126 Plastic Package
EC
B
DESCRIPTION
SYMBOL TEST CONDITION
MIN
MAX
UNITS
Collector Emitter Saturation voltage NON A VCE(sat)
* A VCE(sat)
* Base Emitter On Voltage NON A VBE(on)
* A DC Current Gain hFE
* NON A A hFE
* lhfe l Small signal Current Gain
IC=1.5A, IB=6mA IC=2.0A, IB=8mA IC=1.5A,VCE =3.
BD681 - Fairchild Semiconductor
BD675A/677A/679A/681 BD675A/677A/679A/681 Medium Power Linear and Switching Applications • Medium Power Darlington TR •.
BD681 - ON Semiconductor
www.DataSheet4U.com BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681 BD681 is a Preferred Device Plastic Medium−Powe.
BD681 - SavantIC
·With TO-126 package ·Complement to type BD676A/678A/680A/682 ·DARLINGTON APPLICATIONS ·For medium power linear and swit.
BD681 - Comset Semiconductors
NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are N.
BD681 - Central Semiconductor
The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-.
BD681 - CDIL
SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Powe.
BD681 - Multicomp
NPN Power Darlington Transistor Feature: • NPN Plastic Power Darlington Transistor Absolute Maximum Ratings Parameter.
BD681 - STMicroelectronics
The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 .
BD681 - INCHANGE
·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 100V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Ty.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BD680 |
Motorola Inc |
PNP Transistor |
|
| 2 | BD680 |
ON Semiconductor |
PNP Silicon Transistor |
|
| 3 | BD680 |
CDIL |
PNP DARLIGNTON POWER SILICON TRANSISTORS |
|
| 4 | BD680 |
Multicomp |
PNP Power Darlington Transistors |
|
| 5 | BD680 |
Comset Semiconductors |
Power Transistor |
|
| 6 | BD680 |
Central Semiconductor |
SILICON PNP TRANSISTOR |
|
| 7 | BD680 |
STMicroelectronics |
Complementary power Darlington transistors |
|
| 8 | BD680 |
INCHANGE |
PNP Transistor |
|
| 9 | BD680A |
STMicroelectronics |
Complementary power Darlington transistors |
|
| 10 | BD680A |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 11 | BD680A |
Motorola Inc |
PNP Transistor |
|
| 12 | BD680A |
ON Semiconductor |
PNP Silicon Transistor |
|