BD681 INCHANGE NPN Transistor Datasheet, en stock, prix

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BD681

INCHANGE
BD681
BD681 BD681
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Part Number BD681
Manufacturer INCHANGE
Description ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 100V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD682 ·Minimum Lot-to-Lot variations for robust device performance and reliab...
Features STICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 100V; IB= 0 VCB= 100V; IE= 0 VCB= 100V; IE= 0;TC= 100℃ VEB= 5V; IC= 0 hFE DC Current Gain IC= 1.5 A ; VCE= 3V BD681 MIN MAX UNIT 100 V 2.5 V 2.5 V 0.5 mA 0.2 2.0 mA 2.0 mA 750 NOTICE: ISC reserves the rights to make changes of the...

Document Datasheet BD681 Data Sheet
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