BD543C NPN SILICON POWER TRANSISTORS Datasheet

BD543C NPN SILICON POWER TRANSISTORS

BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD544 Series 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E q q q q TO-220 PACKAGE (T.

Features

perature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC ICM Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE 40 60 80 100 40 60 80 100 5 8 10 70 2 -65 to +150 -65 to +150 -65 to +150 260 V A A W W °C °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Product.

The same part from a different manufacturer

BD543C - SavantIC

·With TO-220C package ·Complement to type BD544/A/B/C ·8 A continuous collector current ·10 A peak Collector current PI.

BD543C - INCHANGE

·70 W at 25°C Case Temperature ·Complement to Type BD544/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot var.

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BD543C - Power Innovations Limited