BD543B NPN Transistor Datasheet

BD543B NPN Transistor

·70 W at 25°C Case Temperature ·Complement to Type BD544/A/B/C ·8 A Continuous Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD543 40 BD543A 60 VCBO Collector-Base.

Features

.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD543 V(BR)CEO Collector-Emitter Breakdown Voltage BD543A BD543B IC= 30mA ; IB= 0 BD543C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V BD543 VCE= 40V; VBE= 0 ICES Collector Cutoff Current BD543A BD543B VCE=.

The same part from a different manufacturer

BD543B - Power Innovations Limited

BD543B - SavantIC

·With TO-220C package ·Complement to type BD544/A/B/C ·8 A continuous collector current ·10 A peak Collector current PI.

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BD543B - INCHANGE