BD433 - Inchange Semiconductor

BD433 Silicon NPN Power Transistors

·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 22V(Min) ·Complement to type BD434 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 22 V VCES Col.

Features

IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V ICBO Collector Cutoff Current VCB= 22V; IE= 0 ICEO Collector Cutoff Current VCE= 22V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 0.5A; VCE= 1V hFE-3 DC Current Gain IC= 2A; VCE= 1V fT Current-Gain—Bandwidth Product IC= 0.25A; VCE= 1V BD433 MIN TYP. MAX UNIT 22 V 0.5 V 1.1 V 100 μA 100 μA 1 mA 40 85 50 3 MHz NOTICE： ISC reserves the rights to make changes o.