·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Excellent Safe Operating Area ·Complement to Type BD367 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta.
ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BD366 CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;IB=0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB=1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=20A; IB=2A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC=10A; IB=1A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC=20A; IB=2A 2.0 V ICBO Collector Cutoff Current VCB=60V; IE=0 0.1 mA ICEO Collector Cutoff Current VCE= 60V; IB= 0 0.5 mA IE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD364 |
INCHANGE |
PNP Transistor | |
2 | BD365 |
INCHANGE |
PNP Transistor | |
3 | BD367 |
INCHANGE |
PNP Transistor | |
4 | BD368 |
INCHANGE |
PNP Transistor | |
5 | BD369 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
6 | BD3004HFP |
Rohm |
Voltage Regulator | |
7 | BD3005HFP |
Rohm |
Voltage Regulator | |
8 | BD301 |
INCHANGE |
NPN Transistor | |
9 | BD301N |
ShunYe |
30 AMP BLOCK DIODES | |
10 | BD301P |
ShunYe |
30 AMP BLOCK DIODES | |
11 | BD302 |
Inchange Semiconductor Company Limited |
Silicon PNP Power Transistor | |
12 | BD3020HFP |
ROHM |
500mA Output LDO Regulators |