BD364 - INCHANGE

BD364 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Excellent Safe Operating Area ·Complement to Type BD365 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta.

Features

ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BD364 CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;IB=0 50 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB=1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=20A; IB=2A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC=10A; IB=1A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC=20A; IB=2A 2.0 V ICBO Collector Cutoff Current VCB=50V; IE=0 0.1 mA ICEO Collector Cutoff Current VCE= 50V; IB= 0 0.5 mA IE.