BD286 - INCHANGE

BD286 PNP Transistor

·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -45V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC = -2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .

Features

e specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V ICBO Collector Cutoff Current VCB= -45V; IE= 0 ICEO Collector Cutoff Current VCE= -45V; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -10mA; VCE= -5V hFE-2 DC Current Gain IC= -0.5A; VCE= -1V hFE-3 DC Current Gain IC= -2A; VCE= -1V fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V MIN TYP. MAX UNIT -45 V -0.6 V -.