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BD263 - Inchange Semiconductor

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BD263 Silicon NPN Power Transistor

·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .

Features

e specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 80V; IB= 0 VCB= 80V; IE= 0 VCB= 80V; IE= 0;TC= 100℃ VEB= 5V; IC= 0 hFE DC Current Gain IC= 1.5 A ; VCE= 3V BD263 MIN MAX UNIT 60 V 2.5 V 2.5 V 0.5 mA 0.2 2.0 mA 2.0 mA 750 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at.

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