·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
e specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 80V; IB= 0 VCB= 80V; IE= 0 VCB= 80V; IE= 0;TC= 100℃ VEB= 5V; IC= 0 hFE DC Current Gain IC= 1.5 A ; VCE= 3V BD263 MIN MAX UNIT 60 V 2.5 V 2.5 V 0.5 mA 0.2 2.0 mA 2.0 mA 750 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD2606MVV |
ROHM |
6-Channel Charge Pump White LED Driver | |
2 | BD2610 |
Brinkmann Pumpen |
Originalbetriebsanleitung | |
3 | BD262 |
INCHANGE |
PNP Transistor | |
4 | BD2626 |
BeRex |
Dual Band 2-Way SMT Power Divider | |
5 | BD26502GUL |
ROHM |
Dot Matrix LED Display Driver | |
6 | BD26503GUL |
ROHM |
Dot Matrix LED Display Driver | |
7 | BD26A01 |
TNK |
100 Base-T DUAL Port Transformer | |
8 | BD201 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | BD201 |
Comset Semiconductors |
SILCON EPITAXIAL-BASE POWER TRANSISTORS | |
10 | BD201F |
INCHANGE |
NPN Transistor | |
11 | BD202 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
12 | BD202 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |