BD159G - ON Semiconductor

BD159G Plastic Medium-PowerSilicon NPN Transistor

BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com • Suitable for Transformerless, Line−Operated Equipment • Thermopadt Construction Provides High Power Dissipation Rating • for High Reliability These Devices .

Features

http://onsemi.com
• Suitable for Transformerless, Line−Operated Equipment
• Thermopadt Construction Provides High Power Dissipation Rating
• for High Reliability These Devices are Pb−Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC ICM IB PD 20 0.16 TJ, Tstg
  –65 to +150 W mW/_C _C Value 350 375 5.0 0.5 1.0 0.25 Unit Vdc Vdc Vdc .