BD159 - Fairchild Semiconductor

BD159 NPN Epitxial Silicon Transistor

BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD157 : BD158 : BD159 : BD157 : BD158 : BD159 Value 275 325 375 250 300 35.

Features

100 240 µA µA µA µA Test Condition IC = 1mA, IB = 0 Min. 250 300 350 Typ. Max. Units V V V ICBO
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD157/158/159 Typical Characteristics 100 0 V CE = 10V 2.0 IC = 10 IB VCE(sat)[V], SATURATION VOLTAGE 1E -3 0.00 1 0.01 0.1 1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1E-4 hFE, DC CURRENT GAIN 100 10 1 1E -401 0.00 1E-3 0.01 0.1 1 I C [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 25 IC[A], C.