MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX17LT1/D General Purpose Transistors COLLECTOR 3 1 BASE 2 EMITTER COLLECTOR 3 1 BASE 2 EMITTER PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 3 MAXIMUM RATINGS Value Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Volta.
Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417
– 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
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Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector
–Emitter Breakdown Voltage (IC = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCX18LT1G |
ON Semiconductor |
Transistor | |
2 | BCX18 |
NXP |
PNP general purpose transistors | |
3 | BCX18 |
Motorola |
Transistor | |
4 | BCX18 |
CDIL |
Transistor | |
5 | BCX18 |
Kexin |
PNP Transistor | |
6 | BCX18 |
GME |
PNP Transistor | |
7 | BCX12 |
Siemens Semiconductor Group |
NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) | |
8 | BCX13 |
Siemens Semiconductor Group |
PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage) | |
9 | BCX17 |
NXP |
PNP general purpose transistors | |
10 | BCX17 |
Motorola |
Transistor | |
11 | BCX17 |
CDIL |
Transistor | |
12 | BCX17 |
STMicroelectronics |
PNP Transistor |