BCX13 - Siemens Semiconductor Group

BCX13 PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)

PNP Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 12 (NPN) q 2 1 3 BCX 13 Type BCX 13 Marking BCX 13 Ordering Code Q62702-C26 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltag.

Features

racteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 500 mA, IB = 50 mA AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = .