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BCW66 SMALL SIGNAL NPN TRANSISTORS Type BCW66F BCW 66G BCW 66H s Marking EF EG EH s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENT IS BCW68 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V C.
less otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IE = 0) Test Cond ition s V CE = Rated V CES V CE = Rated V CES V EB = 4 V I C = 10 mA 45 V V I C = 10 µ A 75 V V I C = 10 µ A 5 V T amb = 150 oC Min. Typ . Max. 20 20 20 Un it nA µA nA V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V EB = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current G ain V CE(sat )∗ V BE(s at)∗ h FE∗ I C .
BCW66 - Galaxy Electrical
BL Galaxy Electrical NPN General Purpose Amplifier FEATURES z For general AF appilications. z High current gain. Pb L.
BCW66 - BLUE ROCKET ELECTRONICS
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features BCW68 。 Complementary to BCW68. / .
BCW66 - NXP
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complemen.
BCW66 - JCET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW66 TRANSISTOR (NPN) FEATUR.
BCW66 - Infineon Technologies AG
BCW65, BCW66 NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturat.
BCW66 - nexperia
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complemen.
BCW66 - Central Semiconductor
The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial plan.
BCW66 - Kexin
SMD Type Transistors NPN Transistors BCW66 (KCW66) ■ Features ● BCW66 is subdivided into three groups F,G and H accord.
BCW66 - Multicomp
Features: tFor general AF appilications tHigh current gain tLow collector-emitter saturation voltage tComplementary .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCW60 |
NXP |
NPN general purpose transistors |
|
| 2 | BCW60 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
| 3 | BCW60 |
Infineon Technologies AG |
NPN Silicon AF Transistors |
|
| 4 | BCW60 |
Vishay |
Small Signal Transistors |
|
| 5 | BCW60 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistors |
|
| 6 | BCW60 |
Zetex Semiconductors |
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS |
|
| 7 | BCW60A |
Samsung semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 8 | BCW60A |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
|
| 9 | BCW60A |
Infineon Technologies AG |
NPN Silicon AF Transistors |
|
| 10 | BCW60A |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 11 | BCW60A |
Vishay |
Small Signal Transistors |
|
| 12 | BCW60A |
Fairchild Semiconductor |
Transistor |
|