BCW66 |
Part Number | BCW66 |
Manufacturer | JCET |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW66 TRANSISTOR (NPN) FEATURES Complementary to BCW68 BCW66 is subdivided into three groups F,G and H accord... |
Features |
Complementary to BCW68 BCW66 is subdivided into three groups F,G and H according to DC current gain
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 75 45 5 0.8 0.2 150
-55 ~ +150
Unit V V V A W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown ... |
Document |
BCW66 Data Sheet
PDF 441.64KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BCW60 |
NXP |
NPN general purpose transistors | |
2 | BCW60 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | |
3 | BCW60 |
Infineon Technologies AG |
NPN Silicon AF Transistors | |
4 | BCW60 |
Vishay |
Small Signal Transistors | |
5 | BCW60 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistors |