BCR8CS - Mitsubishi Electric Semiconductor

BCR8CS Triac

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME ∗ 3.0 –0.5 +0.3 0 –0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 1 2 3 24 2.6±0.4 4.5 ∗ Measurement point of case temperature • IT (RMS) .............

Features

ion Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Tc =105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 8 80 26 5 0.5 10 2
  –40 ~ +125
  –40 ~ +125 1.2 Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 (1.5) MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM.