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BCR8CS |
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| Part Number | BCR8CS |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5... |
| Features |
ion Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Tc =105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 8 80 26 5 0.5 10 2 –40 ~ +125 –40 ~ +125 1.2 Unit A A A2s W W V A °C °C g V1. Gate open. Feb.1999 (1.5) MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM... |
| Document |
 BCR8CS Data Sheet
PDF 86.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCR8CM |
Mitsubishi Electric Semiconductor |
TRIAC |
|
| 2 | BCR8CM |
Powerex Power Semiconductors |
TRIAC |
|
| 3 | BCR8CM-12LA |
Renesas Technology |
Triac |
|
| 4 | BCR8CM-12LB |
Renesas Technology |
Triac |
|
| 5 | BCR8CS-12LA |
Renesas Technology |
Triac |
|