BCR164... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 10kΩ ) BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F* BCR164L3* BCR164T* * Preliminary Maximum Ratings Parameter U6s U6 U6s 1=B 1=B 1=B 2=E 2=E 2=E 3=.
in. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 30 0.5 0.5 3.2 0.42 - 4.7 0.47 160 3 100 520 0.3 1.1 1.4 6.2 0.52 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCR164 |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
2 | BCR164F |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
3 | BCR164L3 |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
4 | BCR162 |
Siemens Semiconductor Group |
PNP Silicon Digital Transistor | |
5 | BCR162 |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
6 | BCR162F |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
7 | BCR162L3 |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
8 | BCR162T |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
9 | BCR162W |
Siemens Semiconductor Group |
PNP Silicon Digital Transistor | |
10 | BCR166 |
Siemens Semiconductor Group |
PNP Silicon Digital Transistor | |
11 | BCR166 |
Infineon Technologies AG |
PNP Silicon Digital Transistor | |
12 | BCR166F |
Infineon Technologies AG |
PNP Silicon Digital Transistor |